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A gate turn-off thyristor (GTO) is three terminal semiconductor device – made up of four layers of alternating P-type and N-type material. Just like a conventional thyristor, it is also a current controlled, minority carrier device. The gate turn-off thyristor was invented with the purpose to address the difficulties in the turn OFF mechanism of … Read more
An MCT or a MOS-controlled Thyristor is a semiconductor device with the combined capabilities of a thyristor and a MOSFET. It was introduced in the year 1992. It comes with several advantages when compared to other semiconductor devices. Its vertical structure allows low conduction loss and high voltage capabilities. The silicon-controlled rectifiers have a very … Read more
MTO stands for MOS turn-off thyristor. It is a high-power bipolar MOS thyristor that constitutes both MOSFET and Gate Turn-off thyristor (GTO). It was developed as a replacement for GTO. It is a latching device that outperforms MCT and IGBT when it comes to power and blocking voltages. It was developed by Silicon Power Company (SPCO) … Read more
A TRIAC or TRIode for Alternating Current is a three-terminal bidirectional thyristor, meaning that can conduct current in both directions when activated properly. It is used in AC switching applications. It can be considered as two SCRs connected in antiparallel. Unlike a silicon-controlled rectifier, it is capable of conducting positive and negative cycles of electric … Read more
Thyristors are high-speed semiconductor switching devices that are made up of four layers of alternating p and n-type materials. They are used in AC/DC switching and AC power control applications. The thyristor symbol is a diode symbol that has three terminals, the gate, anode, and cathode. Silicon Controlled Rectifier (SCR) Silicon Controlled Rectifier (SCR) is … Read more
A Silicon Controlled Rectifier (SCR) is a unidirectional semiconductor device that can be triggered into conduction by applying a positive gate current. It led to tremendous advancements in power semiconductor devices. They are also known as phase-control thyristors. They are high-speed semiconductor switching devices, similar to Shockley diodes but with an extra terminal. They generally … Read more
An insulated-gate bipolar transistor (IGBT) is a type of bipolar transistor that has an insulated gate terminal. The structure of the IGBT includes an input MOSFET which consists of the gate terminal and the output BJT consists of the collector and emitter terminals. The collector and emitter are the conduction terminals and the gate is … Read more
BJT and MOSFET are two types of semiconductor transistors. Even though both of them are transistors, they are different from each other in various aspects. By the end of this article, you will know the difference between BJT and MOSFET. Bipolar Junction Transistors (BJT) A Bipolar junction transistor, commonly known as BJT, by its construction, … Read more
A Metal Oxide Semiconductor Field effect transistors, commonly known as MOSFET, are semiconductor switching devices that have three terminals which are the gate, drain and source. They are unipolar transistors, this means they depend on one type of charge carriers which can either be holes or electrons. They are much simpler to fabricate compared to … Read more
Commissioning of variable speed drive is the process of checking, inspecting, testing, and configuring the equipment at the project site so that it shall fulfill the technical and functional requirements of the customer. This makes the equipment ready for safe operation. This article explains the Commissioning procedure for VFD. Why is commissioning of variable frequency … Read more
